Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-04-08
2008-04-08
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S487000, C117S008000, C257SE21134
Reexamination Certificate
active
07354810
ABSTRACT:
A method of manufacturing a semiconductor thin film includes (A) forming an amorphous semiconductor film on a substrate, (B) irradiating a beam to a surface of the amorphous semiconductor film such that a predetermined region of the amorphous semiconductor film is melted and solidified to form a crystallized semiconductor film, and (C) scanning the beam in a first direction. A second direction is a direction on the surface of the amorphous semiconductor film perpendicular to the first direction. A length along the second direction of a cross section of the beam is substantially equal to or less than two times a width along the second direction of the crystallized semiconductor film.
REFERENCES:
patent: 6300175 (2001-10-01), Moon
patent: 6736895 (2004-05-01), Jung
patent: 6770545 (2004-08-01), Yang
patent: 6825493 (2004-11-01), Jung
patent: 6825496 (2004-11-01), Yamazaki et al.
patent: 2003/0042430 (2003-03-01), Tanaka et al.
patent: 2003/0218170 (2003-11-01), Yamazaki et al.
patent: 2004/0087116 (2004-05-01), Nakayama
patent: 2002-217206 (2002-08-01), None
“Sequential lateral solidification of thin silicon films on SiO2”; Robert S. Sposili and James S. Im; American Institute of Physics, Appl. Phys. Lett. 69(19), Nov. 4, 1996, pp. 2864-2866).
“Excimer-Laser-Induced Lateral-Growth of Silicon Thin-Films”; Kensuke Ishikawa, Motohiro Ozawa, Chang-Ho Oh, and Masakiyo Matsumura; Japanese Journal of Applied Physics, vol. 37 (1998) pp. 731-736, Part 1, No. 3A, Mar. 1998.
Nakata Mitsuru
Takaoka Hiromichi
Fourson George
Muirhead and Saturnelli LLC
NEC Corporation
LandOfFree
Method of and apparatus for manufacturing semiconductor thin... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of and apparatus for manufacturing semiconductor thin..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of and apparatus for manufacturing semiconductor thin... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2799448