Method of and apparatus for detecting and controlling in situ cl

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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134 11, 216 59, 216 61, H05H 100

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active

060174145

ABSTRACT:
The end of a cleaning process of a vacuum workpiece processing chamber evacuated to a constant pressure vacuum condition is controlled. The chamber is cleaned by exciting a cleaning gas to a plasma state by a field including an electric component. The process is terminated in response to detection of a substantial decrease in the time rate of change of pressure in a foreline of a vacuum pump evacuating the chamber after the plasma electrical impedance has been stabilized. The substantial decrease signals that the chamber is clean. A horn in the chamber that excites the gas to a plasma is indicated as being clean when the plasma electrical impedance is stable. The indication of plasma impedance stabilization is derived by monitoring horn DC bias voltage, or one or both variable reactances of a matching network connected between the horn and an r.f. excitation source for the horn.

REFERENCES:
patent: 4345968 (1982-08-01), Coe
patent: 4362596 (1982-12-01), Desilets et al.
patent: 4605479 (1986-08-01), Faith, Jr.
patent: 4657616 (1987-04-01), Benzing et al.
patent: 4786352 (1988-11-01), Benzing
patent: 4960488 (1990-10-01), Law et al.
patent: 5089084 (1992-02-01), Chhabra et al.
patent: 5198634 (1993-03-01), Mattson et al.
patent: 5219791 (1993-06-01), Freiberger
patent: 5281302 (1994-01-01), Gabric et al.
patent: 5284547 (1994-02-01), Watanabe
patent: 5308950 (1994-05-01), Ramm et al.
patent: 5326723 (1994-07-01), Petro et al.
patent: 5565038 (1996-10-01), Ashley
patent: 5785796 (1998-07-01), Lee
patent: 5812403 (1998-09-01), Fong et al.
patent: 5837094 (1998-11-01), Tzukazaki et al.

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