Method of and apparatus for controlling temperature in the proce

Coating apparatus – Gas or vapor deposition – With treating means

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Details

118715, 156626, 156643, 156345, H01L 2100

Patent

active

053342518

ABSTRACT:
The temperature of a substrate, such as a semiconductor wafer, is controlled in the processing of the substrate, such as sputtering, etching, deposition, or the like. According to the present invention, an accurately controlled temperature environment may be achieved by measuring the temperature and emissivity of heat from the surface of the substrate being processed, remotely as well as on a real-time basis, and correcting the temperature to reflect the actual temperature according to the emissivity as measured.

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patent: 4147571 (1979-04-01), Stringfellow et al.
patent: 4543576 (1985-09-01), Hieber et al.
patent: 4913790 (1990-04-01), Narita et al.
patent: 4987856 (1991-01-01), Hey et al.
patent: 5084825 (1992-01-01), Kelly et al.
patent: 5147498 (1992-09-01), Nashimoto
patent: 5208643 (1993-05-01), Fair
The American Heritage Dictionary of the English Language; 1969; p. 1336, 427.

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