Method of analysis of multiple layer samples

Optics: measuring and testing – By polarized light examination – Of surface reflection

Reexamination Certificate

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C356S128000, C356S630000

Reexamination Certificate

active

11098669

ABSTRACT:
Spectroscopic ellipsometer system(s) mediated methodology for quantifying layer defining parameters in mathematical models of samples which contain a plurality of layers of different materials, at least some of which are absorbing of electromagentic radiation, wherein an acquired data set is not sufficient to allow definite one for one parameter evaluation, and wherein a global fit procedure can be applied to obtain good parameter starting values for use in a parameter evaluating regression procedure.

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patent: 7110912 (2006-09-01), Tiwald
“P-N Junction-Based Wafer Flow Process For Stencil Mask Fabrication”, Rangelow et al., J. Vac. Sci. Technology B, Nov./Dec. p. 3592 (1998); and.
“Application of IR Variable Angle Spectroscopic Ellipsometry To The Determination Of Free Carrier Concentration Depth Profiles”, Tiwald et al., Thin Film Solids 313-314, p. 661, (1998).
“Optical Analysis of Complex Multilayer Structures Using Multiple Data Types”, Johns et al., SPIE vol. 2253, (1994).
J.A. Woollam Co. Inc. 2002 flyer is identified, as it included an article on global fitting to provide starting values for entry to a regression procedure.

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