Method of an apparatus for sputtering

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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20419215, 20419218, 20419222, 20419223, 20419226, 20419229, 20429806, 20429808, C23C 1434

Patent

active

061103284

ABSTRACT:
A sputtering method comprises applying a negative voltage intermittently in a constant periodic cycle to a cathode disposed in a vacuum chamber, wherein the negative voltage is intermittently applied so that a time during which the negative voltage is not applied includes a time during which the voltage is controlled to be zero volt in a range of from 10 .mu.s to 10 ms, and the zero voltage time is equal to or longer than the time required by one arcing from its generation to extinction.

REFERENCES:
patent: 4978437 (1990-12-01), Wirz
patent: 5015493 (1991-05-01), Gruen
patent: 5180476 (1993-01-01), Ishibashi et al.
patent: 5240581 (1993-08-01), Kim
patent: 5241152 (1993-08-01), Anderson et al.
patent: 5286360 (1994-02-01), Szczyrbowski et al.
patent: 5300205 (1994-04-01), Fritsche
patent: 5303139 (1994-04-01), Mark
patent: 5718813 (1998-02-01), Drummond et al.
Anderson et al., "A New Technique for Arc Control in DC Sputtering," Society of Vacuum Coaters, 35th Annual Technical Conference Proceedings, pp. 325-329, 1992.

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