Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-06-21
2009-12-08
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C438S712000, C438S975000, C382S144000, C382S151000, C356S399000, C356S400000, C356S401000, C216S084000
Reexamination Certificate
active
07629259
ABSTRACT:
A method for aligning a reticle is provided. A first patterned layer with a first alignment grid is formed. Sidewall layers are formed over the first patterned layer to perform a first shrink. The first alignment grid after shrink is etched into an etch layer to form an etched first alignment grid. The patterned layer is removed. An optical pattern of a second alignment grid aligned over the etched first alignment grid is measured. The optical pattern is used to determine whether the second alignment grid is aligned over the etched first alignment grid.
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Bever Law Group LLP
Khosraviani Arman
Lam Research Corporation
Vu David
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