Method of achieving improved STI gap fill with reduced stress

Details Method of achieving improved STI gap fill with reduced stress Method of achieving improved STI gap fill with reduced stress

2006-10-10

2006-10-10

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S436000, C438S437000, C257S637000, C257S639000, C257S640000

Reexamination Certificate

active

07118987

ABSTRACT:
A shallow trench isolation (STI) structure and method of forming the same with reduced stress to improve charge mobility the method including providing a semiconductor substrate comprising at least one patterned hardmask layer overlying the semiconductor substrate; dry etching a trench in the semiconductor substrate according to the at least one patterned hardmask layer; forming one or more liner layers to line the trench selected from the group consisting of silicon dioxide, silicon nitride, and silicon oxynitride; forming one or more layers of trench filling material comprising silicon dioxide to backfill the trench; carrying out at least one thermal annealing step to relax accumulated stress in the trench filling material; carrying out at least one of a CMP and dry etch process to remove excess trench filling material above the trench level; and, removing the at least one patterned hardmask layer.

REFERENCES:
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patent: 6261920 (2001-07-01), Oyamatsu
patent: 6461937 (2002-10-01), Kim et al.
patent: 6566229 (2003-05-01), Hong et al.
patent: 6596607 (2003-07-01), Ahn
patent: 6683354 (2004-01-01), Heo et al.
patent: 6693050 (2004-02-01), Cui et al.

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