Method of accurate compositional analysis of dielectric films on

Details Method of accurate compositional analysis of dielectric films on Method of accurate compositional analysis of dielectric films on

1995-10-04

1998-01-13

Nguyen, Nam

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437225, H01L 21306

Patent

active

057074844

ABSTRACT:
A method of accurately determining the composition of a dielectric film in a semiconductor device by performing a compositional analysis on a film only portion of the semiconductor device.

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patent: 5277769 (1994-01-01), Medernach
patent: 5536359 (1996-07-01), Kawada et al.
Wong et al., "A Study Of Buried Silicon Nitride Layers Formed By Nitrogen Implantation With a Stationary Beam", Nuclear Instruments and Methods in Physics Research, vol. B17, No. 2, Sep. 1986, North-Holland, Amsterdam, pp. 122-126.

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