Method of accessing semiconductor circuits from the backside...

Details Method of accessing semiconductor circuits from the backside... Method of accessing semiconductor circuits from the backside...

2011-01-11

2011-01-11

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S689000, C257SE21219

Reexamination Certificate

active

07867910

ABSTRACT:
The invention generally relates to semiconductor device processing, and more particularly to methods of accessing semiconductor circuits from the backside using ion-beam and gas-etch to mill deep vias through full-thickness silicon. A method includes creating a pocket in a material to be etched, and performing an isotropic etch of the material by flowing a reactive gas into the pocket and directing a focused ion beam into the pocket.

REFERENCES:
patent: 2006/0030160 (2006-02-01), Kane et al.
Harriott, “Focused-Ion-Beam-Induced Gas Etching,” Jpn.J. Appl. Phys., 33, 1994, pp. 7094-7098.

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