Method of accelerating test of semiconductor device

Details Method of accelerating test of semiconductor device Method of accelerating test of semiconductor device

2006-11-17

2009-02-03

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S014000, C438S018000, C257S048000

Reexamination Certificate

active

07485475

ABSTRACT:
Semiconductor elements composing a semiconductor device are formed on a semiconductor substrate. Wirings composed of copper or an alloy mainly composed of copper are formed in wiring layers through interlayer insulation films to connect the semiconductor elements to each other. When the wirings are formed, a temperature of the wirings is held in a first temperature zone covering ±40° C. of a temperature at which a stress migration is most accelerated.

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patent: 3-254126 (1991-11-01), None
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