Method making an ultra high density DRAM cell with stacked capac

Details Method making an ultra high density DRAM cell with stacked capac Method making an ultra high density DRAM cell with stacked capac

1990-03-09

1992-03-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437228, 437919, H01L 2170

Patent

active

050968475

ABSTRACT:
An ultra high integration DRAM cell and a method of manufacturing therefor are provided which increases the capacitance of the cell capacitor. The plate electrode consists of the second and fourth polycrystalline silicon layers; the storage electrode consists of the third polycrystalline silicon layer; the dielectric layer is increased by the area of the first dielectric layer.

REFERENCES:
patent: 4685197 (1987-08-01), Tigelaar et al.
patent: 4700457 (1987-10-01), Matsukawa
patent: 4910566 (1990-03-01), Ema

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