Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2005-05-24
2005-05-24
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S210000, C438S381000, C365S148000, C365S157000, C365S158000
Reexamination Certificate
active
06897101
ABSTRACT:
An integrated magnetoresisitive semiconductor memory configuration has MRAM memory cells located at crossover points of selection lines that are embedded in different, mutually separate line planes. A read/write current can be impressed in respective selection lines for writing to each MRAM memory cell and for reading an information item written therein. In this magnetoresistive semiconductor memory configuration, selection lines that serve for reading a cell information item are in each case located in separate first and second line planes in direct contact with the memory cells. A third and a fourth line plane are spatially separated and electrically isolated from the first and second line planes and are occupied by write selection lines for writing a cell information item.
REFERENCES:
patent: 5587943 (1996-12-01), Torok et al.
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 6211559 (2001-04-01), Zhu et al.
patent: 6490190 (2002-12-01), Ramcke et al.
patent: 6624011 (2003-09-01), Subramanian et al.
patent: 6627530 (2003-09-01), Li et al.
patent: 20020075719 (2002-06-01), Johnson et al.
patent: 20030077891 (2003-04-01), Drynan
patent: 20030202404 (2003-10-01), Scheuerlein
patent: 20040130935 (2004-07-01), Gider et al.
patent: 20040130936 (2004-07-01), Nguyen et al.
patent: 1 061 592 (2000-12-01), None
patent: 9914760 (1999-03-01), None
Roy E. Scheuerlein: “Magneto-Resistive IC Memory Limitations and Architecture Implications”,Proceedings of the 7thIEEE International Nonvolatile Memory Technology Conference, Jun. 22-24, 1998, pp. 47-50.
S. Tehrani et al.: “Recent Developments in Magnetic Tunnel Junction MRAM”,IEEE Transactions on Magnetics, vol. 36, No. 5, Sep. 2000, pp. 2752-2757.
Coleman W. David
Greenberg Laurence A.
Mayback Gregory L.
Nguyen Khiem
Stemer Werner H.
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