Method for writing multiple value into nonvolatile memory in an

Details Method for writing multiple value into nonvolatile memory in an Method for writing multiple value into nonvolatile memory in an

1996-10-01

1998-01-13

Dinh, Son T.

Static information storage and retrieval

Floating gate

Multiple values

36518518, 36518519, 36518527, G11C 1602

Patent

active

057086001

ABSTRACT:
There is provided a method for writing a multiple value into a nonvolatile memory capable of writing multiple value data into a floating gate type memory cell in an equal time even when the data are varied. With a specified voltage applied to a control gate of a memory cell, a drain voltage which is varied according to each of data values "11", "10" and "01" to a drain so that a write time required for setting a varied threshold voltage is equalized. By moving electrons between a floating gate and a drain through a gate insulating film, the threshold voltage of the memory cell is set.

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H. Onda et al, "A Novel Cell Structure Suitable for a 3 Volt Operation, Sector Erase Flash Memory" IEDM Tech. Digest 1992, pp. 599-602.
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H. Shirai, et al, "A 0.54.mu.m.sup.2 Self-Aligned, HSG Floating Gate Cell (SAHF Cell) for 256Mbit Flash Memories", IEEE, 1995, pp. 653-656.
S. Ueno et al, "Optimum Votage Scaling Methodology for Low Voltage Operation of CHE type Flash EEPROMs with High Reliability, Maintaining the Constant Performance", 1996 Symposium on VLSI Technology Digest of Technical Papers, IEEE, 1996, pp. 54-55.

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