Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2008-03-18
2008-03-18
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S022000, C438S046000, C438S047000, C257SE21482
Reexamination Certificate
active
07344958
ABSTRACT:
A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.
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DenBaars Steven P.
Figge Stephan
Hommel Detlef
Kruse Carsten
McCarthy Lee
Gates & Cooper LLP
Japan Science and Technology Agency
Lebentritt Michael
Roman Angel
The Regents of the University of California
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