Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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C438S022000, C438S046000, C438S047000, C257SE21482

Reexamination Certificate

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11175761

ABSTRACT:
A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.

REFERENCES:
patent: 3607463 (1971-09-01), Kinoshita et al.
patent: 5696389 (1997-12-01), Ishikawa et al.
patent: 5932048 (1999-08-01), Furukawa et al.
patent: 6998281 (2006-02-01), Taskar et al.
patent: 7119271 (2006-10-01), King et al.
patent: 2003/0145884 (2003-08-01), King et al.
patent: 2005/0189551 (2005-09-01), Peng et al.
Sink et al., “Cleaved GaN facets by wafer fusion of GaN to InP”, Appl. Phys. Lett. 68 (15) (Apr. 8, 1996).
Kish et al., “Very high-efficienty semiconductor wafer-bonded transparent-substrate (Al,Ga1-x)0.5In0.5P/GaP light-emitting diodes”, Appl. Phys. Lett. 64 (21) (1994).
Smathers et al., “Nanometer scale surface clustering on ZnSc epilayers”, Applied Physics Letters, vol. 72 No. 10 (Mar. 9, 1998).
Carlin et al., “High-quality AllnN for high index contrast Bragg mirrors lattice matched to GaN”, Applied Physics Letters, vol. 83 No. 4 (Jul. 28, 2003).
Liau et al., “Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration”, Appl. Phys. Lett. 56 (8) (Feb. 19, 1990).
Someya et al., “Highly reflective GaN/Al0.34Gn0.66N quarrer-wave reflectors grown by metal organic chemical vapor deposition”, Appl. Phys. Lett., vol. 73 No. 25 (Dec. 21, 1998).
Jasinski et al., “Microstructure of GaAs/GaN interfaces produced by dircer wafer fusion”, Appl. Phys. Lett., vol. 81 No. 17 (Oct. 21, 2002).

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