Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-01-30
1997-08-26
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438695, 438970, 438702, 438712, 438625, H01L 21768
Patent
active
056610831
ABSTRACT:
A method for forming a via in an integrated circuit having a reduced contact resistance. The integrated circuit includes a photoresist layer, an oxide layer, an etch stop layer and a metal layer. In one embodiment, a portion of the photoresist layer is removed to expose the underlying oxide layer, after which a portion of the oxide layer is removed to expose the underlying etch stop layer. A portion of the etch stop layer is then removed using a reactive ion etch-downstream microwave ash system under conditions that are effective to create a substantially water-soluble polymer residue within the via, to expose a portion of the underlying metal layer. The water-soluble polymer is then removed to expose the underlying metal layer.
REFERENCES:
patent: 4745042 (1988-05-01), Sasago et al.
patent: 4758528 (1988-07-01), Goth et al.
patent: 4814041 (1989-03-01), Auda
patent: 4816115 (1989-03-01), Horner et al.
patent: 4943539 (1990-07-01), Wilson et al.
patent: 5296404 (1994-03-01), Akahori et al.
patent: 5376573 (1994-12-01), Richart et al.
patent: 5468342 (1995-11-01), Nulty et al.
patent: 5470790 (1995-11-01), Myers et al.
Wolf, S. and R. N. Tauber, Silicon Processing for the VLSI Era, vol. 1--Process Technology, Lattice Press, pp. 541, 543, 544, 546, 576, & 581 Jan. 1, 1986.
Chen Chun Ya
Chen Song
Integrated Device Technology Inc.
Niebling John
Turner Kevin
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