Method for via formation in HgCdTe

Details Method for via formation in HgCdTe Method for via formation in HgCdTe

1983-08-31

1984-05-08

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156651, 156655, 1566591, 204192E, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044472919

ABSTRACT:
A via formation process for HgCdTe (i.e., for pseudo-binary alloys of HgTe and CdTe). Photoresist is patterned on the HgCdTe surface, and ion milling is used to cut holes in the HgCdTe as defined by the photoresist. With this photoresist still in place, the HgCdTe is wet etched to smooth the via walls and expand the via size to a precise dimension.

REFERENCES:
patent: 3234058 (1966-02-01), Marinace
patent: 4290844 (1981-09-01), Rotolante et al.
patent: 4310583 (1982-01-01), Baker et al.

Affiliated with

Also associated with

Rating

Method for via formation in HgCdTe does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for via formation in HgCdTe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for via formation in HgCdTe will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1601169