Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-05-15
1992-11-17
Beck, Shrive
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505734, 505730, 427 62, 4272553, 4272552, 4272551, 4271263, 427585, B05D 512, C23C 1600
Patent
active
051643634
ABSTRACT:
A substrate to be deposited with a superconducting oxide thin film thereon is set a reaction furnace. An organic metal source gas and oxygen-containing gas are alternately introduced into the reactor to pyrolyze, thereby depositing the superconducting oxide thin film containing metal elements of the organic metal at which time an inert gas is used as a carrier gas for the carrier gas.
REFERENCES:
patent: 4761269 (1988-08-01), Conger et al.
patent: 4771015 (1988-09-01), Kanai et al.
patent: 4950642 (1990-08-01), Okamoto et al.
Abe et al, "Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. Film Formation by an OM-CVD Method," Jpn. J. Appl. Phys. vol. 27(8) Aug. 1988 L1473-1475.
Kwo et al, "In situ epitaxial growth of Y.sub.1 Ba.sub.2 C.sub.3 O.sub.7-x films by molecular beam epitaxy with an activated oxygen source" Appl. Phys. lett. 53(26) Dec. 1988 pp. 2683-2685.
Tsuroka et al, "Y-Ba-Cu-O film growth by OMCVD using N.sub.2 O" Jpn. J. Appl. Phys. 28(10) Oct. 1989 L1800-1802.
Formation of HIgh T.sub.c Superconducting Films by Organometallic Chemical Vapor Deposition-Appl. Phys. Lett. 52 (20), May 16, 1988/A. D. Berry, et al.
Applied Physics Letters, vol. 53, No. 18, Oct. 31, 1988, pp. 1756-1758, American Institute of Physics, New York, US.
A. J. Panson et al: "Chemical vapor deposition of YBa.sub.2 CU.sub.3 O.sub.7 using metalorganic chelate precursors".
Applied Physics Letters, vol. 52, No. 2, May 16, 1988, pp. 1743-1745, New York, U.S.; A. D. Berry et al: "Formation of high T.sub.c superconducting films by organometallic chemical vapor deposition".
Eguchi Kazuhiro
Nakanisi Takatosi
Satoh Rie
Beck Shrive
Kabushiki Kaisha Toshiba
King Roy V.
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