Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2006-05-09
2006-05-09
Olsen, Allan (Department: 1763)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S024000, C216S072000, C216S073000, C216S074000, C216S079000
Reexamination Certificate
active
07041224
ABSTRACT:
The etching of a material in a vapor phase etchant is disclosed where a vapor phase etchant is provided to an etching chamber at a total gas pressure of 10 Torr or more, preferably 20 Torr or even 200 Torr or more. The vapor phase etchant can be gaseous acid etchant, a noble gas halide or an interhalogen. The sample/workpiece that is etched can be, for example, a semiconductor device or MEMS device, etc. The material that is etched/removed by the vapor phase etchant is preferably silicon and the vapor phase etchant is preferably provided along with one or more diluents. Another feature of the etching system includes the ability to accurately determine the end point of the etch step, such as by creating an impedance at the exit of the etching chamber (or downstream thereof) so that when the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber. A first plasma or wet chemical etch (or both) can be performed prior to the vapor phase etch.
REFERENCES:
patent: 3511727 (1970-05-01), Hays
patent: 4190488 (1980-02-01), Winters
patent: 4310380 (1982-01-01), Flamm et al.
patent: 4498953 (1985-02-01), Cook et al.
patent: 4695700 (1987-09-01), Provence et al.
patent: 4740410 (1988-04-01), Muller et al.
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4789426 (1988-12-01), Pipkin
patent: 5206471 (1993-04-01), Smith
patent: 5330301 (1994-07-01), Brancher
patent: 5439553 (1995-08-01), Grant et al.
patent: 5534107 (1996-07-01), Gray et al.
patent: 5604367 (1997-02-01), Yang
patent: 5672242 (1997-09-01), Jen
patent: 5716495 (1998-02-01), Butterbaugh et al.
patent: 5726480 (1998-03-01), Pister
patent: 5753073 (1998-05-01), Jen
patent: 5757456 (1998-05-01), Yamazaki et al.
patent: 5835256 (1998-11-01), Huibers
patent: 5858065 (1999-01-01), Li et al.
patent: 6022456 (2000-02-01), Tai et al.
patent: 6051503 (2000-04-01), Bhardwaj et al.
patent: 6153115 (2000-11-01), Le et al.
patent: 6162367 (2000-12-01), Tai et al.
patent: 6277173 (2001-08-01), Sadakata et al.
patent: 6290864 (2001-09-01), Patel et al.
patent: 6328801 (2001-12-01), Gary et al.
patent: 6334928 (2002-01-01), Sekine et al.
patent: 6355181 (2002-03-01), McQuarrie
patent: 2001/0002663 (2001-06-01), Tai et al.
patent: 2002/0033229 (2002-03-01), Lebouitz
patent: 0704884 (1996-04-01), None
patent: 0822582 (1998-02-01), None
patent: 0822584 (1998-04-01), None
patent: 0838839 (1998-04-01), None
patent: 0878824 (1998-11-01), None
patent: 0955668 (1999-11-01), None
patent: 0878824 (2000-01-01), None
patent: 1982/57098679 (1982-06-01), None
patent: 1983/58130529 (1983-08-01), None
patent: 1985/60057938 (1985-04-01), None
patent: 1986/601053732 (1986-03-01), None
patent: 1986/61134019 (1986-06-01), None
patent: 1986/61181131 (1986-08-01), None
patent: 1986/61187238 (1986-08-01), None
patent: 1986/61270830 (1986-12-01), None
patent: 1987/62071217 (1987-04-01), None
patent: 1988/63155713 (1988-06-01), None
patent: 1989/01208834 (1989-08-01), None
patent: 1989/10217921 (1989-08-01), None
patent: 1990/02250323 (1990-10-01), None
patent: 1991/03012921 (1991-01-01), None
patent: 1992/04096222 (1992-03-01), None
patent: 1995/07029823 (1995-01-01), None
patent: 1997/09251981 (1997-09-01), None
patent: 1998/10313128 (1998-11-01), None
patent: 10313128 (1998-11-01), None
patent: 1998/10317169 (1998-12-01), None
patent: WO-98/05605 (1998-02-01), None
patent: WO-98/13856 (1998-04-01), None
patent: WO-98/32163 (1998-07-01), None
patent: WO-99/01887 (1999-01-01), None
patent: WO-99/03313 (1999-01-01), None
patent: WO-99/49506 (1999-09-01), None
patent: WO-00/52740 (2000-08-01), None
Aliev et al., “Development of Si(100) Surface Roughness at the Initial Stage of Etching in F2 and XeF2 Gases Ellipsometric Study”, Surface Science 442 (1999), pp. 206-214.
Glidemeister, J.M., “Xenon Difluoride Etching System” (Nov. 17, 1997).
Habuka et al., “Dominant Overall Chemical Reaction in a Chlorine Trifluoride-Silicon-Nitrogen System at Atmospheric Pressure”, Japan Journal of Applied Physics vol. 38 (1999), pp. 6466-6469.
Hecht et al., “A Novel X-ray Photoelectron Spectroscopy Study of the Al/SiO2 Interface”, J. Appl. Phys. vol. 57 (Jun. 15, 1985), pp. 5256-5261.
Houle, F.A., “Dynamics of SiF4 Desorption During Etching of Silicon by XeF2”. IBM Almaden Research Center (Apr. 15, 1987), pp. 1866-1872.
Flamm et al., “XeF2 and F-Atom Reactions with Si: Their Significance for Plasma Etching”, Solid State Technol. 26, 117 (1983).
Ibbotson et al., “Plasmaless Dry Etching of Silicon with Fluorine-containing Compounds”, J. Appl. Phys. vol. 56 No. 10 (Nov. 1984), pp. 2939-2942.
Ibbotson et al., “Comparison of XeF2 and F-atom Reactions with Si and SiO2”, Applied Physics Letter. vol. 44, 1129 (1984).
Streller et al., “Selectivity in Dry Etching of Si (100) and XeF2 and VUV Light”, Elsevier Science B.V., Applied Surface Science vol. 106 (1996), pp. 341-346.
Vugts et al., “Si/XeF2 Etching: Temperature Dependence”, J. Vac. Sci. Technol. A 14(5) (Sep./Oct. 1996), pp. 2766-2774.
Wang et al., “Gas-Phase Silicon Etching with Bromine Trifluoride”, Transducers '97, 1997 International Conference on Solid-State Sensors and Actuators, Chicago (Jun. 16-19, 1997), pp. 1505-1508.
Winters, H.F., “Etch Products from the Reaction of XeF2 with SiO2, SiO3, Si3N4, SiC, and Si in the Presence of Ion Bombardment”, J. Vac. Sci. Technol. B 1(4) (Oct./Dec. 1983). pp. 927-931.
Winters et al., “The Etching of Silicon with XeF2 Vapor”, Appl. Phys. Letter, vol. 34(1) (Jan. 1, 1979), pp. 70-73.
XACTIX, Inc., Marketing Brochure (Jun. 27, 1999).
“Xenon Difluoride Isotropic Etch System: Seeing is Believing”, Surface Technology Systems Ltd. brochure, Newport, UK (date unknown).
Assorted promotional literature, Surface Technology Systems Ltd., Newport, UK (Jul. 28, 1999).
Heureux Peter
Huibers Andrew G.
MacDonald Douglas B.
Patel Satyadev R.
Schaadt Gregory P.
Muir Gregory R.
Olsen Allan
Reflectivity, Inc.
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