Method for vapor-phase epitaxial growth of a single crystalline-

Details Method for vapor-phase epitaxial growth of a single crystalline- Method for vapor-phase epitaxial growth of a single crystalline-

1986-09-05

1988-07-12

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156613, 156614, 156DIG70, 252 6236A, C30B 2512, C30B 2522

Patent

active

047567929

ABSTRACT:
In a GaAs epitaxial wafer including, for example, two epitaxial layers having high and low carrier concentrations, the carrier concentration of the low carrier concentration layer is liable to greatly vary, so that wafers suitable for FETs and Schottky barrier diodes operated at UHF and SHF are produced at only a low yield. This drawback is eliminated by adjusting the heating temperature of GaAs substrate to 690.degree. to 730.degree. C. during the growth of the low carrier concentration layer.

REFERENCES:
patent: 3762945 (1973-10-01), DiLorenzo
patent: 3836408 (1974-09-01), Kasano
patent: 3904449 (1975-09-01), DiLorenzo et al.
patent: 3925119 (1975-12-01), Philbrick et al.
patent: 4407694 (1983-10-01), Eu et al.
patent: 4419179 (1983-12-01), Nogami

Affiliated with

Also associated with

Rating

Method for vapor-phase epitaxial growth of a single crystalline- does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for vapor-phase epitaxial growth of a single crystalline-, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for vapor-phase epitaxial growth of a single crystalline- will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-662496