Method for vapor deposition of a metal compound film

Details Method for vapor deposition of a metal compound film Method for vapor deposition of a metal compound film

2005-01-25

2005-01-25

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S769000, C438S770000, C438S775000

Reexamination Certificate

active

06846743

ABSTRACT:
A method for forming a metal compound film includes alternate irradiation of an organometal compound and oxygen or nitrogen radicals to deposit monoatomic layers of the metal compound. The organometal compound includes zirconium, hafnium, lanthanide compounds. The resultant film includes little residual carbon and has excellent film characteristic with respect to leakage current.

REFERENCES:
patent: 5827802 (1998-10-01), Lagues
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6521911 (2003-02-01), Parsons et al.
patent: 6548424 (2003-04-01), Putkonen
patent: 6620670 (2003-09-01), Song et al.
patent: 6669825 (2003-12-01), Ohmi et al.
H. J. Osten et al. “High-k Gate Dielectrics with Ultra-low Leakage Current Based on Praseodymium Oxide”, IEDM Technical Digests 2000, pp. 653-656 with Abstract.
L. Manchanda et al., “Si-Doped Aluminates for High Temperature Metal-Gate CMOS: Zr-Al-Si-O, A Novel Gate Dielectric for Low Power Applications”, IEDM Technical Digests 2000, pp. 23-26 with Abstract.

Affiliated with

Also associated with

Rating

Method for vapor deposition of a metal compound film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for vapor deposition of a metal compound film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for vapor deposition of a metal compound film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3407100