Method for using oxygen plasma treatment on a dielectric layer

Details Method for using oxygen plasma treatment on a dielectric layer Method for using oxygen plasma treatment on a dielectric layer

1997-07-03

1999-03-16

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438624, 438631, 438788, 438789, 438790, 438763, H01L 21316

Patent

active

058830154

ABSTRACT:
The method for depositing a dielectric layer can be used to evenly deposit the dielectric layer to be applied to a semiconductor device. The method includes steps of: a) providing a substrate; b) depositing a first dielectric film on the subtrate; c) introducing an oxygen plasma for eliminating an uneven distribution of charges on a surface of the substrate; and d) forming a second dielectric film on the first dielectric film treated with the oxygen plasma for obtaining the dielectric layer having a uniform thickness on the substrate,

REFERENCES:
patent: 5554570 (1996-09-01), Maeda et al.
patent: 5556806 (1996-09-01), Pan et al.
patent: 5563104 (1996-10-01), Jang et al.
patent: 5605859 (1997-02-01), Lee
patent: 5627403 (1997-05-01), Bacchetta et al.

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