Semiconductor device manufacturing: process – Cleaning of reaction chamber
Reexamination Certificate
2006-10-06
2009-02-24
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Cleaning of reaction chamber
C438S680000, C438S778000, C257SE21170, C257SE21218, C257SE21227, C257SE21311, C257SE21319
Reexamination Certificate
active
07494943
ABSTRACT:
In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.
REFERENCES:
patent: 6207008 (2001-03-01), Kijiima
patent: 2005/0066993 (2005-03-01), Hasebe et al.
patent: 2006/0042544 (2006-03-01), Hasebe et al.
patent: 2006/0068598 (2006-03-01), Okada et al.
patent: 2006/0081182 (2006-04-01), Okada et al.
patent: 3-293726 (1991-12-01), None
Fujita Takehiko
Kimura Norifumi
Noro Naotaka
Tonegawa Yamato
Nhu David
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tokyo Electron Limited
LandOfFree
Method for using film formation apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for using film formation apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for using film formation apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4114316