Method for using film formation apparatus

Coating apparatus – Program – cyclic – or time control

Reexamination Certificate

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C118S715000, C118S724000, C118S725000, C156S345240

Reexamination Certificate

active

07938080

ABSTRACT:
In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.

REFERENCES:
patent: 6207008 (2001-03-01), Kijima
patent: 7494943 (2009-02-01), Noro et al.
patent: 2005/0066993 (2005-03-01), Hasebe et al.
patent: 2006/0042544 (2006-03-01), Hasebe et al.
patent: 2006/0068598 (2006-03-01), Okada et al.
patent: 2006/0081182 (2006-04-01), Okada et al.
patent: 2007/0093075 (2007-04-01), Noro et al.
patent: 2009/0090300 (2009-04-01), Noro et al.
patent: 3-293726 (1991-12-01), None
patent: 7-188932 (1995-07-01), None
patent: 10-256244 (1998-09-01), None
patent: 11-335842 (1999-12-01), None
patent: 2003-77838 (2003-03-01), None
patent: 2004-343026 (2004-12-01), None
patent: 2005-39153 (2005-02-01), None

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