Method for using ammonium salt slurries for chemical mechanical

Details Method for using ammonium salt slurries for chemical mechanical Method for using ammonium salt slurries for chemical mechanical

1996-10-21

1998-06-30

Gupta, Yogendra N.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

252 791, 438693, 438754, 451287, H01L 2100

Patent

active

057733643

ABSTRACT:
A method for chemical/mechanical polishing (CMP) uses a slurry (22). This slurry (22) contains one or more ammonium salts, such as ammonium nitride (NH.sub.4 NO.sub.3), as an oxidizing/etching species within the slurry (22). This slurry (22) is used to polish a metal layer (14) whereby the ammonium salt does not create slurry distribution problems, does not contain metallic species, does not contain mobile ions like potassium, and is environmentally safe.

REFERENCES:
patent: 5527423 (1996-06-01), Neville et al.
F.B.Kaufman, et al., "Chemical-Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects", J.Electrochem, Soc., vol. 138, No. 11, Nov. 1991, pp. 3460-3465.
Janos Farkas, et al., "Oxidation and Etching of Tungsten In CMP Slurries",Advanced Metallization for ULSI Application 1994, Material Research Scientist Symposium Proceeding 1994, Pittsburgh, PA, pp. 1-8.

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