Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-03-24
1999-12-14
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438622, 438626, 438629, 438630, 438634, 438637, 438648, 438649, 438656, 438685, 438682, 438683, 438785, H01L 214763
Patent
active
060017260
ABSTRACT:
A method for forming a contact structure (10) which enables the use of ultra-shallow source/drain junctions begins by forming source and drain regions (14) and gate electrode (16). The source and drain regions (14) and the gate electrode (16) are silicided to form silicide regions (20). A conductive tungsten nitride etch stop layer (22) is formed overlying the silicide regions (20). Contact plug regions (28) are then formed to contact to the etch stop layer (22) and silicided regions (20). At this point, all of the silicide regions (20) are electrically short circuited. To remove this electric short circuit, an isotropic etch process comprising hydrogen peroxide, ammonium hydroxide, and water is used to remove portions of the tungsten nitride regions which are between the individual contact portions (28) in a self-aligned manner.
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Bajaj Rajeev
Iyer Subramoney V.
Mattay Shyam
Nagabushnam Rajan
Venkataraman Ram
Gurley Lynne A.
Motorola Inc.
Niebling John F.
Witek Keith E.
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