Method for unloading thermally treated non-planar silicon...

Details Method for unloading thermally treated non-planar silicon... Method for unloading thermally treated non-planar silicon...

2006-08-04

2010-10-26

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C118S500000, C118S719000, C118S728000, C414S757000

Reexamination Certificate

active

07820554

ABSTRACT:
A process for producing a silicon wafer by conveying a (100) face silicon wafer into and from a treating furnace of a single wafer heat-treating apparatus or a vapor phase growth apparatus with a conveying blade having a mounting face capable of mounting only a specified region of the wafer inclusive of a center position of its rear face for subjecting the wafer to a heat treatment or a vapor phase growth, in which <010> or <001> orientation is shifted by a predetermined angle with respect to a transverse direction of the mounting face of the conveying blade.

REFERENCES:
patent: 3920492 (1975-11-01), Sugita et al.
patent: 6164894 (2000-12-01), Cheng
patent: 6217663 (2001-04-01), Inokuchi et al.
patent: 6267423 (2001-07-01), Marohl et al.
patent: 10-294287 (1998-11-01), None
patent: 10-294287 (1998-11-01), None
patent: 11-054598 (1999-02-01), None
European Search Report dated Nov. 26, 2008.
Taiwanese Office Action dated Apr. 7, 2010, Issued in Corresponding Taiwanese Patent Application 95128863.

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