Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-12-23
1999-10-05
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438657, 438685, 438680, 438768, H01L 21441
Patent
active
059638281
ABSTRACT:
A method in a semiconductor process for forming a layer of a selected compound on a substrate of a semiconductor device. A layer of titanium is formed on the substrate as a sacrificial layer. The layer of titanium is reduced using a gaseous form of a fluorine containing compound in which the fluorine containing compound includes the selected compound that is to be formed on the substrate of the semiconductor device.
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Allen Leslie H.
Allman Derryl D.J.
Ganapathiraman Ramanath
Hornback Verne C.
Bailey Wayne P.
Everhart Caridad
LSI Logic Corporation
Yee Duke W.
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