Method for tunably repairing low-k dielectric damage

Details Method for tunably repairing low-k dielectric damage Method for tunably repairing low-k dielectric damage

2011-07-19

2011-07-19

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Repair or restoration

Reexamination Certificate

active

07981699

ABSTRACT:
A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R)x(OR′)y, where y≧1 and x+y=4, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group and a second repair agent represented as Si—(R)x(OR′)yR″, where y≧1 and x+y=3, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group, and R″ is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.

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U.S. Appl. No. 12/604,224, filed Oct. 22, 2009, entitled “Method for Repairing Low-K Dielectric Damage,” by Sirard et al.

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