Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-05-03
2005-05-03
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C438S428000
Reexamination Certificate
active
06888212
ABSTRACT:
A method of forming isolation regions in a silicon substrate comprising the steps of forming a trench in the silicon substrate, filling the trench with a silanol polymer material then heating the silanol polymer material so that silicon dioxide is formed in the trench and thereby forms the isolation region. In the preferred embodiment, the silicon substrate is covered by a masking stack which is then etched to expose the underlying silicon substrate. The silicon substrate is then etched to form the trench and the silanol polymer material is deposited in the trench and fills the trench from the bottom up thereby avoiding divots and other defects. The silanol polymer grows faster on the silicon substrate than it does on the nitride. After the silanol polymer is reacted to form the silicon dioxide, CMP polishing is then used to remove the remaining masking stack and silicon dioxide above the surface of the silicon substrate.
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Iyer Ravi
Pan Pai
Sandhu Gurtej
Dolan Jennifer M
Jr. Carl Whitehead
Knobbe Martens Olson & Bear LLP
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