Method for treating via sidewalls with hydrogen plasma

Details Method for treating via sidewalls with hydrogen plasma Method for treating via sidewalls with hydrogen plasma

1997-08-05

1999-03-16

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438782, 438624, 438629, 438637, 438639, 438672, 438692, 438780, 438798, 438631, 438626, H01L 2102

Patent

active

058830146

ABSTRACT:
A method for treating via sidewalls comprising the steps of providing a substrate having a number of metallic wires already formed; depositing a liner oxide layer; depositing an organic spin-on-glass layer; and depositing a second oxide layer. The second oxide layer is planarized by a chemical-mechanical polishing method. Photolithographic and etching methods, employing oxygen plasma treatment as well as a wet etching removal method are used to form vias above the metallic layers. A hydrogen plasma treatment is performed for the via sidewalls to prevent the occurrence of out-gassing and to obtain superior electrical properties. A titanium/titanium nitride film is deposited, and aluminium or tungsten is deposited into the vias and to form aluminium or tungsten plugs, thus completing the manufacturing process according to this invention. A semiconductor device formned by this method is also described.

REFERENCES:
patent: 5280190 (1994-01-01), Lu
patent: 5286675 (1994-02-01), Chen et al.
patent: 5294836 (1994-03-01), Kishi
patent: 5472890 (1995-12-01), Oda
patent: 5498889 (1996-03-01), Hayden
patent: 5506177 (1996-04-01), Kishimoto et al.
patent: 5652182 (1997-07-01), Cleeves
patent: 5691240 (1997-11-01), Yang
patent: 5719083 (1998-02-01), Komatsu
patent: 5729041 (1998-03-01), Yoo et al.
patent: 5763954 (1998-06-01), Hyajutake

Affiliated with

Also associated with

Rating

Method for treating via sidewalls with hydrogen plasma does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for treating via sidewalls with hydrogen plasma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for treating via sidewalls with hydrogen plasma will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-817454