Method for treating semiconductor processing components and...

Details Method for treating semiconductor processing components and... Method for treating semiconductor processing components and...

2008-12-15

2011-11-15

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S476000, C438S703000, C257SE21224, C257SE21054, C257SE21603, C257SE21605, C257SE21699

Reexamination Certificate

active

08058174

ABSTRACT:
A semiconductor processing component has an outer surface portion comprised of silicon carbide, the outer surface portion having a skin impurity level and a bulk impurity level. The skin impurity level is average impurity level from 0 nm to 100 nm of depth into the outer surface portion, the bulk impurity level is measured at a depth of at least 3 microns into the outer surface portion, and the skin impurity level is not greater than 80% of the bulk impurity level.

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