Method for treating a wafer edge

Details Method for treating a wafer edge Method for treating a wafer edge

2007-08-14

2007-08-14

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Ionized irradiation

C438S710000, C257SE21214

Reexamination Certificate

active

10908441

ABSTRACT:
A method for treating an edge portion of a wafer with a plasma or select chemical formulation in order to enhance adhesion characteristics and inhibit delamination of a layer of material from the wafer surface only on the edge portion that is being treated. Alternatively, the method may be utilized to effectuate a cleaning of an edge portion of a wafer.

REFERENCES:
patent: 5270267 (1993-12-01), Ouellet
patent: 5425846 (1995-06-01), Koze et al.
patent: 6020639 (2000-02-01), Ulrich et al.
patent: 6642128 (2003-11-01), Lu et al.
patent: 6837967 (2005-01-01), Berman et al.
patent: 2003/0203650 (2003-10-01), Robbins
IBM Technical Disclosure Bulletin, “Interface Toughening by Ion Implantation for Enhancement of Thin Film Adhesion,” https:// www.delphion.com/tdbs/tdb?order=90A+61781 , Jun. 1990, pp. 69-71.

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