Method for treating a dielectric film to reduce damage

Details Method for treating a dielectric film to reduce damage Method for treating a dielectric film to reduce damage

2007-06-15

2009-11-24

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S637000, C438S672000, C438S622000, C438S508000

Reexamination Certificate

active

07622390

ABSTRACT:
A method of treating a dielectric layer on a substrate is described. The method comprises forming the dielectric layer on the substrate, wherein the dielectric layer comprises a dielectric constant value less than the dielectric constant of SiO2. A feature pattern is formed in the dielectric layer using an etching process. Following the etching process, the feature pattern is treated using a nitrogen-containing plasma in order to form nitride surface layers by introducing nitrogen to the exposed surfaces of the dielectric layer in the feature pattern. Thereafter, the feature pattern is selectively etched to partially or fully remove the nitride surface layers.

REFERENCES:
patent: 7329956 (2008-02-01), Yu et al.
patent: 2001/0015046 (2001-08-01), Hong
patent: 2002/0001952 (2002-01-01), Chooi et al.
patent: 2005/0074961 (2005-04-01), Beyer et al.
patent: 2006/0099802 (2006-05-01), Lin et al.

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