Method for transferring superfine photoresist structures

Details Method for transferring superfine photoresist structures Method for transferring superfine photoresist structures

1988-05-18

1989-09-05

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156657, 1566591, 1566611, 437228, 437240, 437241, H01L 21308

Patent

active

048635561

ABSTRACT:
A geometrically accurate transfer with low manufacturing tolerances is made possible by a method for transferring superfine photoresist structures into a dielectric layer. A photoresist mask is provided on the dielectric layer. This mask is used in a subsequent ion implantation. The implantation is carried out under such circumstances that neither the resist mask nor the dielectric layer which is to be structured is got through by the incident ion beam.

REFERENCES:
patent: 4450041 (1984-05-01), Aklufi
patent: 4514251 (1985-04-01), Van Ommen et al.
Journal of Electrochemical Society, vol. 128, No. 3, Mar. 1981, pp. 617-619.
IEEE Transactions on Electron Devices, vol. ED-26, No. 4, Apr. 1979, pp. 604-610.
IBM Technical Disclosure Bulletin, vol. 24, No. 11B, Apr. 1982, p. 634.
IBM Technical Disclosure Bulletin, vol. 17, No. 2, Jul. 1974, p. 635.

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