Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2011-08-02
2011-08-02
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S458000, C438S459000, C438S763000, C257SE21600
Reexamination Certificate
active
07989304
ABSTRACT:
A transistor formed on a monocrystalline Si wafer is temporarily transferred onto a first temporary supporting substrate. The first temporarily supporting substrate is heat-treated at high heat so as to repair crystal defects generated in a transistor channel of the monocrystalline Si wafer when transferring the transistor. The transistor is then made into a chip and transferred onto a TFT substrate. In order to transfer the transistor which has been once separated from the monocrystalline Si wafer, a different method from a stripping method utilizing ion doping is employed.
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International Search Report for PCT/JP2006/324845, mailed Mar. 20, 2007.
Fukushima Yasumori
Takafuji Yutaka
Takei Michiko
Tomiyasu Kazuhide
Ngo Ngan
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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