Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2011-07-19
2011-07-19
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C257SE21567
Reexamination Certificate
active
07981768
ABSTRACT:
A method for producing an epitaxial layer. First, a structure is fabricated by: formation of an intermediate layer on a donor substrate; and formation of the epitaxial layer on the intermediate layer by epitaxy; with the melting temperature of the intermediate layer being lower than the melting temperature of the epitaxial layer; and then a detachment step for transferring the epitaxial layer from the donor substrate. The detachment step includes applying at least one thermal treatment performed at a temperature of between the melting temperature of the intermediate layer and the melting temperature of the epitaxial layer.
REFERENCES:
patent: 5250460 (1993-10-01), Yamagata et al.
patent: 5374564 (1994-12-01), Bruel
patent: 6210479 (2001-04-01), Bojarczuk et al.
patent: 6372608 (2002-04-01), Shimoda et al.
patent: 6559075 (2003-05-01), Kelly et al.
patent: 6566255 (2003-05-01), Ito
patent: 7217639 (2007-05-01), Maurice et al.
patent: 2002/0168864 (2002-11-01), Cheng et al.
patent: 2002/0182839 (2002-12-01), Ogawa et al.
patent: 2005/0136624 (2005-06-01), Cheng et al.
patent: 2007/0037362 (2007-02-01), Bahl
patent: 0 858 110 (1998-08-01), None
patent: 2006 287166 (2006-10-01), None
International Search Report, PCT/IB2008/000967, dated Jul. 7, 2008.
E.P. Donovan, et al., “Heat of Crystallization and Melting Point of Amorphous Silicon”, Applied Physics Letters, vol. 42, No. 8, pp. 698-700, (1983).
A.J. Aubreton-Hervé et al., “Why can Smart-Cut change the future of microelectronics?”, Int. Journal of High Speed Electronics and Systems, vol. 10, No. 1, pp. 131-146, (2000).
Garber Charles D
Patel Reema
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
LandOfFree
Method for transferring an epitaxial layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for transferring an epitaxial layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for transferring an epitaxial layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2712576