Method for TMAH etching of CMOS integrated circuits

Details Method for TMAH etching of CMOS integrated circuits Method for TMAH etching of CMOS integrated circuits

2006-08-22

2006-08-22

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S745000, C438S753000

Reexamination Certificate

active

07094696

ABSTRACT:
A method for preparing and using a tetramethylammonium hydroxide etchant (180). The etchant is prepared by combining precisely known quantities of the etchant components obtained from liquid sources of tetramethylammonium hydroxide (110) and dissolved silicate (115). A precise quantity of an acidic (relative to tetramethylammonium hydroxide) oxidizer is added at intervals during a long etch as well as just before immersing a sample holder (135) and sample in the etchant (180). A precise quantity of tetramethylammonium hydroxide such as can obtained from a pipette (175) is also added during long etches to compensate for the reduction in etchant pH caused by the addition of the oxidizer.

REFERENCES:
patent: 5607718 (1997-03-01), Sasaki et al.
patent: 5817610 (1998-10-01), Honda et al.
patent: 6261466 (2001-07-01), Bayes et al.
patent: 6315635 (2001-11-01), Lin
patent: 6338743 (2002-01-01), Dusemund et al.
patent: 6372055 (2002-04-01), Montano et al.

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