Method for time-evolving rectilinear contours representing...

Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle

Reexamination Certificate

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C716S055000

Reexamination Certificate

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08056021

ABSTRACT:
Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.

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