Method for thinning wafer by grinding

Details Method for thinning wafer by grinding Method for thinning wafer by grinding

2005-10-25

2005-10-25

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Combined with the removal of material by nonchemical means

C438S459000, C438S690000, C438S760000

Reexamination Certificate

active

06958298

ABSTRACT:
A method for thinning a wafer by placing a wafer having a protective tape attached to the front side thereof, on which chip circuits have been fabricated, on a working table in such a manner that the protective tape is intervened between the wafer and the working table, and grinding the back side of the wafer to thin it, the method comprising, prior to the thinning by grinding, adhering the beveled portion at the front side of the wafer to the protective tape. The adhesion is preferably effected by a material exhibiting a modulus of elasticity of 0.1 to 100 MPa at the state of the adhesion of the beveled portion to the protective tape. As the material for the adhesion, an acrylic resinous material of the UV-curing type can be used.

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