Method for thinning SOI films having improved thickness uniformi

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156630, 156649, 437 62, 437 68, 437947, 437981, 148DIG168, H01L 21302

Patent

active

053186630

ABSTRACT:
A method of thinning SOI films for providing ultra-thin active device regions having excellent thickness uniformity and further having self-aligned isolation regions between the active device regions is disclosed. A substrate having an isolation layer formed thereon and further having a single crystal silicon layer formed upon the isolation layer is first provided. A thermal oxide layer is grown upon the silicon layer, patterned in desired regions corresponding to polish stop regions positioned between predetermined active device regions, and etched. The silicon layer is thereafter etched according to the patterned thermal oxide layer with a high selectivity etch, thereby creating grooves in the silicon layer. An insulative polish stop material is then deposited upon the thermal oxide, silicon, and isolation layers, the polish stop material forming top, sidewall, and bottom polish stop material thereon, respectively, partially filling the grooves, and further wherein the bottom polish stop material comprises a prescribed thickness. Polysilicon is deposited upon the polish stop material to further completely fill the grooves and then is planarized down to the top polish stop material. The top polish stop material and the oxide layer are then etched away. Lastly, by chemical-mechanical polishing, the silicon, sidewall polish stop material, and polysilicon are thinned down to the bottom polish stop material, whereby active device regions have uniform thickness corresponding to the thickness of the bottom polish stop material.

REFERENCES:
patent: 3508980 (1970-04-01), Jackson, Jr. et al.
patent: 3826699 (1974-07-01), Sawazaki
patent: 3844858 (1974-10-01), Bean
patent: 3911562 (1975-10-01), Youmans
patent: 3969168 (1976-07-01), Kuhn
patent: 3979237 (1976-09-01), Morcom et al.
patent: 4233091 (1980-11-01), Kawabe
patent: 4735679 (1988-04-01), Lasky
patent: 4851078 (1989-07-01), Short et al.
patent: 4971925 (1990-11-01), Alexander et al.
patent: 5096535 (1992-03-01), Hawkins et al.
patent: 5124274 (1992-06-01), Ohki et al.
patent: 5262346 (1993-11-01), Bindal et al.
"A High Speed Vertical SOI FET Device" by W. H. Chang, Research Disclosure YO890-0266, May 1991, No. 325.
"Fabrication of CMOS on Ultrathin SOI Obtained by Epitaxial Lateral Overgrowth and Chemical-Mechanical Polishing" by G. Shahidi et al., 1990 IEEE, IEDM 90, pp. 587-590.
"Electrical Properties and Technological Perspectives of Thin-film SOI MOSFETs" by M. Yoshimi et al., IEICE Trans., vol. E74, No. 2, pp. 337-351, Feb. 1991.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for thinning SOI films having improved thickness uniformi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for thinning SOI films having improved thickness uniformi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for thinning SOI films having improved thickness uniformi will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-790651

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.