Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-29
2008-12-02
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S634000, C438S636000, C438S678000, C438S767000, C438S768000
Reexamination Certificate
active
07459396
ABSTRACT:
A method for depositing a Ru metal layer on a patterned substrate from a film precursor vapor delivered from a multi-tray film precursor evaporation system. The method comprises providing a patterned substrate in a process chamber of a deposition system, and forming a process gas containing Ru3(CO)12precursor vapor and a carrier gas comprising CO gas. The process gas is formed by: providing a solid Ru3(CO)12precursor in a plurality of spaced trays within a precursor evaporation system, wherein each tray is configured to support the solid precursor and wherein the plurality of spaced trays collectively provide a plurality of surfaces of solid precursor; heating the solid precursor in the plurality of spaced trays in the precursor evaporation system to a temperature greater than about 60° C. and maintaining the solid precursor at the temperature to form the vapor; and flowing the carrier gas in contact with the plurality of surfaces of the solid precursor during the heating to capture Ru3(CO)12precursor vapor in the carrier gas as the vapor is being formed at the plurality of surfaces. The method further includes transporting the process gas from the precursor evaporation system to the process chamber and exposing the patterned substrate to the process gas to deposit a Ru metal layer on the patterned substrate by a thermal CVD.
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Guidotti Emmanuel P.
Hara Masamichi
Kuroiwa Daisuke
Leusink Gerrit J.
Suzuki Kenji
Lebentritt Michael S
Tokyo Electron Limited
Wood Herron & Evans LLP
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