Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-12-05
2006-12-05
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S048000, C438S767000, C438S508000, C438S508000, C372S096000, C257S098000
Reexamination Certificate
active
07144747
ABSTRACT:
A method of thermally treating a substrate that has multiple layers is provided. A substrate layer that is covered on opposite sides is oxidized from side edges thereof toward a center thereof such that, via the following steps, a defined central portion is not oxidized. The substrate is heated in a process chamber to a prescribed treatment temperature. A hydrogen-rich water vapor is introduced into the process chamber for a specified period of time, wherein such introduction is effected prior to, during and/or after the step of heating the substrate to the prescribed temperature. After conclusion of the specified period of time, introduced into the process chamber is one of the group consisting of: dry oxygen, namely pure oxygen in the form of at least one of atomic O, molecular O2and O3; a mixture of oxygen and an inert gas that does not chemically react with the layers of the substrate; an oxygen-containing compound that contains no water; and an oxygen-rich water vapor.
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Chung Hin Yiu
Roters Georg
Dority & Manning P.A.
Le Dung A.
Mattson Thermal Products GmbH
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