Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from liquid combined with subsequent diverse...
Reexamination Certificate
2005-05-24
2005-05-24
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from liquid combined with subsequent diverse...
C438S509000, C438S795000
Reexamination Certificate
active
06897130
ABSTRACT:
The present invention provides a method for thermal processing a semiconductor wafer wherein the semiconductor wafer is heat-treated by means of flash radiation means constituted by a flash discharge lamp after preheating the semiconductor wafer to a predetermined temperature by means of preheating means, the preheating is performed at a preheating temperature capable of controlling that the maximum tension of the semiconductor wafer when heated by the flash radiation means is to be less than the tense strength of the semiconductor wafer itself.
REFERENCES:
patent: 4571486 (1986-02-01), Arai et al.
patent: 57-80729 (1982-05-01), None
patent: 57-162340 (1982-10-01), None
patent: 2002-57301 (2002-02-01), None
patent: 2002-198322 (2002-07-01), None
Miyauchi Koji
Owada Tatsushi
Brewster William M.
Ushio Denki Kabushiki Kaisya
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