Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-02-07
2006-02-07
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S788000, C438S792000, C438S771000, C438S776000
Reexamination Certificate
active
06995097
ABSTRACT:
An embodiment of the instant invention is a method of forming a dielectric layer on a silicon-containing structure, the method comprising the steps of: providing a nitrogen-containing gas; heating the silicon-containing structure to an elevated temperature which is greater than 700 C; and striking a plasma above the silicon-containing structure, wherein combination of the nitrogen-containing gas, the elevated temperature, and the plasma resulting in the thermal nitridation of a portion of the silicon-containing structure. Preferably, the elevated temperature is greater than 900 C (more preferably the elevated temperature is greater than 1000 C). The silicon-containing structure is, preferably, a silicon substrate or a bottom electrode of a storage capacitor of a memory device.
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Brady III W. James
Duong Khanh
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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