Method for the testing of electrically programmable memory cells

Static information storage and retrieval – Read/write circuit – Testing

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365185, 36518908, 36518903, 371 214, 371 28, G11C 1300, G06F 1100

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049583247

ABSTRACT:
A method for testing electrically programmable memories is disclosed. To enable the measurement of the current of programmed cells and blank cells (and not only to check whether the cells are programmed or not), and to enable this measurement even after the memory has been encapsulated in a package, it is proposed herein to connect, in testing mode, the bit line of a cell to be tested with the programming terminals to which there is applied, in programming mode, the programming high voltage Vpp. A low voltage Vte is applied to this terminal in testing mode, and the current flowing between this terminal and the voltage source is measured. This current is the current of the tested cell.

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