Semiconductor device manufacturing: process – Having diamond semiconductor component
Reexamination Certificate
1999-12-14
2001-08-28
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Having diamond semiconductor component
C438S514000, C438S528000
Reexamination Certificate
active
06281037
ABSTRACT:
FIELD OF THE INVENTION
The invention relates to the production of semiconductor components of diamonds, diamond layers and diamond-like layers, which are doped by means of ion implantation and in which n-conducting areas are also introduced.
BACKGROUND OF THE INVENTION
It is generally known from semiconductor technology that silicon and silicon carbides can be doped by means of ion implantation with elements of the fifth main group and that n-conducting areas can be produced in this way. The efforts, to use this method for doping diamonds, were unsuccessful. Alterative methods for doping with, for example, lithium or sodium, also did not lead to a satisfactory result (R. Kalish, Ion Implantation in Diamond and Diamond Films: Doping, Damage Effects and their Applications, Applied Surface Science 117/118 (1997)558).
SUMMARY OF THE INVENTION
It is therefore an object of the invention to ensure a layer, which satisfies the respective requirements with regard to n-conductivity, in diamonds, diamond layers and diamond-like layers by means of ion implantation.
The starting materials for the invention are diamonds, diamond layers and diamond-like layers, into which elements of the fifth main group are introduced by means of ion implantation and which are annealed. Pursuant to the invention, silicon is implanted in addition to the elements of the fifth main group in the lateral and deep region, which is to be doped, in a concentration of more than 0.1 atom percent. The silicon can be implanted in the diamond substrate before or after the introduction of the elements of the fifth main group or in one process step together with this introduction. If the silicon is implanted after the ions of the elements of the fifth main group are introduced, the annealing can be carried out after each implantation or only once after the second implantation.
DETAILED DESCRIPTION OF THE INVENTION
The advantages of the invention consist therein that, due to the complete or partial conversion of diamond areas into silicon carbide, the deep donor states of the nitrogen (E
c
−1.7 eV) become flat and, with that, electrically active donor states (E
c
−0.08 . . . 0.14 eV) in the diamond. In addition, the graphite portions in the diamond, which are caused by implantation damage and worsen the semiconducting properties, are reduced. Because of the different energy gaps, hetero pn transitions are formed between the Si
X
C
1−X
areas (3C—SiC: E
g
=2.3 eV) and diamond areas (E
g
=5.5 eV), which have a series of advantages over homo pn transitions, such as a lower electron hole recombination rate. With that, a higher current amplification and a higher limiting frequency are reached.
REFERENCES:
patent: 5298106 (1994-03-01), Kabaloff et al.
patent: 5382809 (1995-01-01), Nishibayashi et al.
patent: 5532495 (1996-07-01), Bloomquist et al.
patent: 5538911 (1996-07-01), Yamazaki
patent: 5994208 (1999-11-01), Prins
patent: 7-115191 (1992-05-01), None
R. Kalish, Ion Implantation in Diamond and Diamond Films: Doping, Damage Effects and their Applications, Applied Surface Science 117/118 (1997) 558.
Fang et al., “Ohmic Contacts Formed by Ion Mixing in the Si-Diamond System”, IEEE Trans on Electron Devices, Sep. 1989, pp 1783-1786.
Heera Viton
Skorupa Wolfgang
Forschungszentrum Rossendorf E.V.
Jordan and Hamburg LLP
Picardat Kevin M.
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