Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-19
2005-07-19
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000
Reexamination Certificate
active
06919264
ABSTRACT:
A method is provided for the solder-stop structuring of elevations on wafers, such as 3D contact structures in the form of resilient or compliant contact bumps, which are connected electrically via a metallization layer to a bonding pad on the wafer, the metallization layer extending over the 3D structure and consisting of a Cu/Ni layer which is covered with a Au layer. The present invention provides a method for the solder-stop structuring of elevations on wafers which can be implemented simply and reliably to produce a reliable solder stop and good flank protection of the 3D structure. According to the invention, a resist is deposited on the tip of a 3D structure and a solder stop layer is then deposited over the metallization, including the resist. The resist on the tip of the 3D structure, including the solder stop layer covering the resist, is subsequently removed so that the Au layer on the tip of the 3D structure is exposed.
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Brintzinger Axel
Schenk Andre
Uhlendorf Ingo
Wollanke Alexander
Baker & Botts LLP
Geyer Scott B.
Infineon - Technologies AG
Lebentritt Michael
Tejwani Manu J.
LandOfFree
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