Method for the simultaneous double-side grinding of a...

Abrading – Precision device or process - or with condition responsive... – Controlling temperature

Reexamination Certificate

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Details

C451S008000, C451S053000, C451S056000, C451S057000, C451S063000, C451S261000, C451S269000

Reexamination Certificate

active

07815489

ABSTRACT:
A method for the simultaneous double-side grinding of a plurality of semiconductor wafers, involves a process wherein each semiconductor wafer lies such that it is freely moveable in a cutout of one of a plurality of carriers caused to rotate by means of a rolling apparatus and is thereby moved on a cycloidal trajectory, wherein the semiconductor wafers are machined in material-removing fashion between two rotating working disks, wherein each working disk comprises a working layer containing bonded abrasive. The method according to the invention makes it possible, by means of specific kinematics, to produce extremely planar semiconductor wafers.

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Thomas Ardelt, Berichte aus dem Produktionstechnischen Zentrum Berlin, Fraunhofer Institut fur Produktionsanlagen und Konstruktionstechnik, IPK Berlin, 2001, pp. 37-53.
English Derwent Abstract AN 2005-387575 corresponds to DE 10344602A1.
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English Derwent Abstract AN 2003-231546 corresponds to DE 10162597C1.
Patent Abstracts of Japan corresponds to JP 02-218557.
Patent Abstracts of Japan corresponds to JP 2001-219362 A.

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