Method for the selective removal of silicon dioxide

Details Method for the selective removal of silicon dioxide Method for the selective removal of silicon dioxide

1996-04-24

1997-09-02

Breneman, R. Bruce

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 79, 216 75, 438743, 438935, H01L 2100, C03C 1500

Patent

active

056627726

ABSTRACT:
In a method for the selective removal of SiO.sub.2 relative to semiconductor materials and/or metal, a specimen to be processed and containing SiO.sub.2 is placed into a chamber having at least one gas admission opening and one gas outlet opening. Using controllable valves at the gas admission opening, dosed quantities of hydrogen fluoride gas and water vapor are admitted into the chamber. These gasses proceed to the SiO.sub.2 in a specimen in a quantity adequate for etching. However, the quantities of these gasses are limited such that a condensation of the water vapor to form liquid water on the specimen during the etching event is avoided. An etching event is then implemented. Water vapor that arises as a reaction product during the etching is eliminated through the gas outlet opening before the occurrence of condensation and, simultaneously, an inert gas is admitted into the chamber through the gas admission opening. These steps are repeated as needed.

REFERENCES:
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 5022961 (1991-06-01), Izumi et al.
patent: 5167761 (1992-12-01), Westendorp et al.
patent: 5174855 (1992-12-01), Tanaka
patent: 5294568 (1994-03-01), McNeilly et al.
D. Syverson, "An Advanced Dry/Wet Cleaning Process for Silicon Surfaces", Technical Report DC/R/D, TR 369, Jun. 1, 1991, FSI International, pp. 1-7.

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